FEATURES
Type Designator: S637T;
Material of transistor: Si;
Polarity: NPN;
Maximum collector power dissipation (Pc), W: 100;
Maximum collector-emitter voltage |Uce|, V: 400;
Maximum collector current |Ic max|, A: 15;
Maximum temperature (Tj), °C: 150;
Forward current transfer ratio (hFE), min: 100.
…
|